Elemental and compound semiconductors have a number of differences in performance, mainly in the following areas:

一、Electronic properties:

1.Electron mobility:

compound semiconductor electron mobility is usually higher than the elemental semiconductor. For example, the electron mobility of gallium arsenide (GaAs) is about 6 times that of silicon (Si). This makes compound semiconductors in high-frequency applications with faster electron transfer rate and better response capability, suitable for high-frequency, high-speed electronic devices, such as microwave communications, radar and other fields; and elemental semiconductors in silicon, germanium, the electron mobility of the relatively low, more suitable for the frequency requirements are not so high for the general integrated circuit.

2.Bandwidth:

The bandwidth of elemental semiconductors is relatively narrow, for example, the bandwidth of silicon is 1.1 eV, the bandwidth of germanium is 0.66 eV. The bandwidth of compound semiconductors has a large range of variations, and the bandwidth of the compound semiconductors can be changed through the adjustment of the composition of the material to meet the needs of different applications. For example, wide-band compound semiconductors (such as silicon carbide (SiC) bandwidth of 3.39 eV, gallium nitride (GaN) bandwidth of 3.3 eV) has a higher breakdown field, higher thermal conductivity and other characteristics, can be in the high temperature, high pressure, high power and other harsh environments, suitable for the manufacture of high-power devices, power electronics devices, etc.; narrow band compound semiconductors in the infrared detection, optical communications and other fields. infrared detection, optical communications and other fields have unique applications.

二、Optoelectronic performance:

1.Luminescence efficiency:

Some compound semiconductors have a direct bandgap structure, which can generate electron - cavity pairs more efficiently under the excitation of light, and thus have better luminescence efficiency. For example, compound semiconductor-based light-emitting diodes (LEDs) outperform similar devices based on elemental semiconductors in terms of brightness and luminous efficiency. Like gallium nitride-based blue LED has been widely used in the field of lighting and display; and elemental semiconductor materials such as silicon, germanium, etc., its luminous efficiency is lower, generally not as the main material of light-emitting devices.

2.Photoelectric conversion efficiency:

in the field of solar cells, compound semiconductor photoelectric conversion efficiency is relatively high. For example, cadmium telluride (CdTe), copper indium gallium selenide (CIGS) and other compound semiconductor materials are important materials for thin-film solar cells, and their photoelectric conversion efficiency can reach a higher level; and elemental semiconductors in the silicon, although one of the main materials for solar cells, but there is still a gap between the photoelectric conversion efficiency relative to some compound semiconductor materials.

三、Physical properties:

1.Radiation resistance:

compound semiconductor performance stability in the radiation environment is relatively high, more suitable for application in aerospace, satellite communications and other areas of high reliability requirements. For example, in the space environment, compound semiconductor devices can better resist the impact of cosmic rays and other radiation; and elemental semiconductor radiation resistance is relatively weak.

2.Temperature Characteristics:

Compound semiconductors have relatively little performance degradation at high temperatures and are able to operate normally at higher temperatures. In contrast, the performance of elemental semiconductors (such as silicon) decreases significantly at high temperatures. This gives compound semiconductors an advantage in electronic devices for high-temperature environments, such as electronic control units around automobile engines and sensors in high-temperature industrial environments.

四、Material Stability and Processability:

1、Material stability:

elemental semiconductors in silicon, due to its easy to form a stable silicon dioxide (SiO₂) layer on the surface, so that the silicon device in the air has a better stability, and silicon dioxide thin film layer can effectively mask the diffusion of most of the important host and donor impurities, for the device fabrication process of selective diffusion to provide an ideal mask. The material stability of compound semiconductors, on the other hand, varies depending on the specific material. Some compound semiconductor materials may undergo oxidation, decomposition, and other reactions in specific environments, requiring special encapsulation and protection measures1.

2.Processability:

elemental semiconductor (such as silicon, germanium) preparation process is relatively mature, easy to obtain high-purity, high-quality crystals, and processing technology is relatively simple, you can use the straight pulling method, zone melting method and other methods of preparation of single crystals, and then through the photolithography, etching and other processes for the device manufacturing. Compound semiconductor preparation process is relatively complex, need to use special growth methods, such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and other technologies to prepare high-quality crystalline films, processing difficulty and cost is relatively high.